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INTEGRATED CIRCUITS
NE/SA/SE5205A Wide-band high-frequency amplifier
Product specification RF Communications Handbook 1992 Feb 24
Philips Semiconductors
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
DESCRIPTION
The NE/SA/SE5205A family of wideband amplifiers replace the NE/SA/SE5205 family. The `A' parts are fabricated on a rugged 2m bipolar process featuring excellent statistical process control. Electrical performance is nominally identical to the original parts. The NE/SA/SE5205A is a high-frequency amplifier with a fixed insertion gain of 20dB. The gain is flat to 0.5dB from DC to 450MHz, and the -3dB bandwidth is greater than 600MHz in the EC package. This performance makes the amplifier ideal for cable TV applications. For lower frequency applications, the part is also available in industrial standard dual in-line and small outline packages. The NE/SA/SE5205A operates with a single supply of 6V, and only draws 24mA of supply current, which is much less than comparable hybrid parts. The noise figure is 4.8dB in a 75 system and 6dB in a 50 system. Until now, most RF or high-frequency designers had to settle for discrete or hybrid solutions to their amplification problems. Most of these solutions required trade-offs that the designer had to accept in order to use high-frequency gain stages. These include high-power consumption, large component count, transformers, large packages with heat sinks, and high part cost. The NE/SA/SE5205A solves these problems by incorporating a wide-band amplifier on a single monolithic chip. The part is well matched to 50 or 75 input and output impedances. The Standing Wave Ratios in 50 and 75 systems do not exceed 1.5 on either the input or output from DC to the -3dB bandwidth limit. Since the part is a small monolithic IC die, problems such as stray capacitance are minimized. The die size is small enough to fit into a very cost-effective 8-pin small-outline (SO) package to further reduce parasitic effects. No external components are needed other than AC coupling capacitors because the NE/SA/SE5205A is internally compensated and matched to 50 and 75. The amplifier has very good distortion specifications, with second and third-order intermodulation intercepts of +24dBm and +17dBm respectively at 100MHz. The device is ideally suited for 75 cable television applications such as decoder boxes, satellite receiver/decoders, and front-end amplifiers for TV receivers. It is also useful for amplified splitters and antenna amplifiers. The part is matched well for 50 test equipment such as signal generators, oscilloscopes, frequency counters and all kinds of signal analyzers. Other applications at 50 include mobile radio, CB radio and data/video transmission in fiber optics, as well as broad-band LANs and telecom systems. A gain greater than 20dB can be achieved by cascading additional NE/SA/SE5205As in series as required, without any degradation in amplifier stability.
PIN CONFIGURATIONS
N, D Packages
VCC VIN GND GND 1 20dB 2 3 4 TOP VIEW 7 6 5 8 VCC VOUT GND GND
SR00215
Figure 1. Pin Configuration
FEATURES
* 600MHz bandwidth * 20dB insertion gain * 4.8dB (6dB) noise figure ZO=75 (ZO=50) * No external components required * Input and output impedances matched to 50/75 systems * Surface mount package available * MIL-STD processing available * 2000V ESD protection
APPLICATIONS
* 75 cable TV decoder boxes * Antenna amplifiers * Amplified splitters * Signal generators * Frequency counters * Oscilloscopes * Signal analyzers * Broad-band LANs * Fiber-optics * Modems * Mobile radio * Security systems * Telecommunications
ORDERING INFORMATION
DESCRIPTION 8-Pin Plastic Small Outline (SO) package 8-Pin Plastic Dual In-Line Package (DIP) 8-Pin Plastic Small Outline (SO) package 8-Pin Plastic Dual In-Line Package (DIP) 8-Pin Plastic Dual In-Line Package (DIP) TEMPERATURE RANGE 0 to +70C 0 to +70C -40 to +85C -40 to +85C -55 to +125C ORDER CODE NE5205AD NE5205AN SA5205AD SA5205AN SE5205AN DWG # SOT96-1 SOT97-1 SOT96-1 SOT97-1 SOT97-1
1992 Feb 24
2
853-1598 05759
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
EQUIVALENT SCHEMATIC
VCC
R1 Q3 Q6
R2 VOUT
Q2 R3
VIN
Q1 RF1
Q4
RE2
RE1 Q5 RF2
SR00216
Figure 2. Equivalent Schematic
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC VAC TA Supply voltage AC input voltage Operating ambient temperature range NE grade SA grade SE grade PDMAX Maximum power dissipation, TA=25C (still-air)1, 2 N package D package 0 to +70 -40 to +85 -55 to +125 C C C PARAMETER RATING 9 5 UNIT V VP-P
1160 780
mW mW
NOTES: 1. Derate above 25C, at the following rates: N package at 9.3mW/C D package at 6.2mW/C 2. See "Power Dissipation Considerations" section.
1992 Feb 24
3
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
DC ELECTRICAL CHARACTERISTICS
VCC=6V, ZS=ZL=ZO=50 and TA=25C in all packages, unless otherwise specified. SYMBOL VCC ICC S21 PARAMETER Operating supply voltage range Supply current Insertion gain TEST CONDITIONS SE5205A Min 5 5 20 19 17 16.5 25 25 19 25 12 27 12 -25 -18 500 500 0.5dB D, N -3dB D, N f=100MHz f=100MHz f=100MHz f=100MHz f=100MHz f=100MHz 4.8 6.0 +7.0 +4.0 +17 +24 300 550 4.8 6.0 +7.0 +4.0 +17 +24 -18 500 500 450 12 -25 12 27 Typ Max 6.5 6.5 32 33 21 21.5 5 5 20 19 17 16.5 25 25 19 25 NE/SA5205A Min Typ Max 8 8 32 33 21 21.5 UNIT V V mA mA dB
Over temperature Over temperature f=100MHz Over temperature f=100MHz D, N DC - fMAX D, N f=100MHz D, N DC - fMAX f=100MHz DC - fMAX
S11 S22 S12 tR tP BW fMAX
Input return loss Output return loss Isolation Rise time Propagation delay Bandwidth Bandwidth Noise figure (75) Noise figure (50) Saturated output power 1dB gain compression Third-order intermodulation intercept (output) Second-order intermodulation intercept (output)
dB dB dB ps ps MHz MHz dB dB dBm dBm dBm dBm
1992 Feb 24
4
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
SUPPLY CURRENT--mA
35 34 32 TA = 25oC OUTPUT LEVEL--dBm 30 28 26 24 22 20 18 16 5 5.5 6 6.5 7 7.5 8 SUPPLY VOLTAGE--V
11 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 101
VCC = 7V VCC = 6V VCC = 5V VCC = 8V
ZO = 50 TA = 25oC
2
4
6
8 102
2
4
6
8 103
SR00218
SR00217
FREQUENCY--MHz
Figure 3. Supply Current vs Supply Voltage
9
Figure 7. Saturated Output Power vs Frequency
10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 101
VCC = 8V VCC = 6V VCC = 7V
NOISE FIGURE--dBm
8
vcc = 8v vcc = 7v vcc = 6v vcc = 5v
OUTPUT LEVEL--dBm
ZO = 50 TA = 25oC
7
VCC = 5V
6
ZO = 50 TA = 25oC
5
101
2
4
6 8 102 2 FREQUENCY--MHz
4
6
8 103
SR00219
2
4
6 8 102 2 FREQUENCY--MHz
4
6
8 103
SR00220
Figure 4. Noise Figure vs Frequency
25 vcc = 8v INSERTION GAIN--dB vcc = 7v 20
Figure 8. 1dB Gain Compression vs Frequency
SECOND-ORDER INTERCEPT--dBM 40 35 30 25 20 15 10 ZO = 50 TA = 25oC
vcc = 6v 15 ZO = 50 TA = 25oC 10 101 vcc = 5v
2
4
6
8 102
2
4
6
8 103
SR00221
4
5
FREQUENCY--MHz
6 7 8 POWER SUPPLY VOLTAGE--V
9
10
SR00222
Figure 5. Insertion Gain vs Frequency (S21)
25 TA = 55oC TA = 25oC 20
Figure 9. Second-Order Output Intercept vs Supply Voltage
30 THIRD-ORDER INTERCEPT--dBm
INSERTION GAIN--dB
25
20 ZO = 50 TA = 25oC
TA = 85oC 15 VCC = 8V ZO = 50 10 101 TA = 125oC
15
10
2
4
6
8 102 2 FREQUENCY--MHz
4
6
8 103
SR00223
5
4
5
6 7 8 9 POWER SUPPLY VOLTAGE--V
10
SR00224
Figure 6. Insertion Gain vs Frequency (S21)
Figure 10. Third-Order Intercept vs Supply Voltage
1992 Feb 24
5
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
2.0 1.9 1.8 1.7 INPUT VSWR 1.6 1.5 1.4 1.3 1.2 1.1 1.0 101 ZO = 50 ZO = 75 TA = 25oC VCC = 6V .
10
-15 ISOLATION--dB
-20
VCC = 6V ZO = 50 TA = 25oC
-25
-30 2 4 6 8 102 2 4 6 8 103
101
2
4
6
8 102
2
4
6
8 103
SR00226
FREQUENCY--MHz
FREQUENCY--MHz
SR00225
Figure 11. Input VSWR vs Frequency
2.0 25 1.9 1.8 1.7 INPUT VSWR 1.6 1.5 1.4 1.3 1.2 1.1 1.0 101 ZO = 50 10 2 4 6 8 102 2 4 6 8 103 ZO = 75 Tamb = 25oC VCC = 6V
Figure 14. Isolation vs Frequency (S12)
vcc = 8v ISOLATION GAIN--dB vcc = 7v 20
vcc = 6v 15 ZO = 75 TA = 25oC 101 vcc = 5v
2
4
6 8 102 2 FREQUENCY--MHz
4
6
8 103
SR00228
FREQUENCY--MHz
SR00227
Figure 12. Output VSWR vs Frequency
Figure 15. Insertion Gain vs Frequency (S21)
40 OUTPUT RETURN LOSS--dB INPUT RETURN LOSS--dB 35 30 OUTPUT 25 20 VCC = 6V ZO = 50 TA = 25oC INSERTION GAIN--dB
25
TA = -55oC TA = 25oC
20
TA = 85oC TA = 125oC
15
ZO = 75 VCC = 6V
INPUT
15 10
101
2
4
6
8 102
2
4
6 8 103
SR00229
10
101
2
4
6
8 102
2
4
6
8 103
SR00230
FREQUENCY--MHz
FREQUENCY--MHz
Figure 13. Input (S11) and Output (S22) Return Loss vs Frequency
Figure 16. Insertion Gain vs Frequency (S21)
1992 Feb 24
6
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
THEORY OF OPERATION
The design is based on the use of multiple feedback loops to provide wide-band gain together with good noise figure and terminal impedance matches. Referring to the circuit schematic in Figure 17, the gain is set primarily by the equation: V OUT V IN + R F1 ) R E1 R E1 (1)
where RE1=12, VBE=0.8V, IC1=5mA and IC3=7mA (currents rated at VCC=6V). Under the above conditions, VIN is approximately equal to 1V. Level shifting is achieved by emitter-follower Q3 and diode Q4 which provide shunt feedback to the emitter of Q1 via RF1. The use of an emitter-follower buffer in this feedback loop essentially eliminates problems of shunt feedback loading on the output. The value of RF1=140 is chosen to give the desired nominal gain. The DC output voltage VOUT can be determined by: VOUT=VCC-(IC2+IC6)R2,(4) where VCC=6V, R2=225, IC2=8mA and IC6=5mA. From here it can be seen that the output voltage is approximately 3.1V to give relatively equal positive and negative output swings. Diode Q5 is included for bias purposes to allow direct coupling of RF2 to the base of Q1. The dual feedback loops stabilize the DC operating point of the amplifier. The output stage is a Darlington pair (Q6 and Q2) which increases the DC bias voltage on the input stage (Q1) to a more desirable value, and also increases the feedback loop gain. Resistor R0 optimizes the output VSWR (Voltage Standing Wave Ratio). Inductors L1 and L2 are bondwire and lead inductances which are roughly 3nH. These improve the high-frequency impedance matches at input and output by partially resonating with 0.5pF of pad and package capacitance.
which is series-shunt feedback. There is also shunt-series feedback due to RF2 and RE2 which aids in producing wideband terminal impedances without the need for low value input shunting resistors that would degrade the noise figure. For optimum noise performance, RE1 and the base resistance of Q1 are kept as low as possible while RF2 is maximized. The noise figure is given by the following equation: NF = r b ) R E1 ) 10 log 1) RO KT 2qlC1
dB
(2)
where IC1=5.5mA, RE1=12, rb=130, KT/q=26mV at 25C and R0=50 for a 50 system and 75 for a 75 system. The DC input voltage level VIN can be determined by the equation: VIN=VBE1+(IC1+IC3) RE1
VCC
R1 650 Q3
R2 225
R0 10
L2 3nH VOUT
Q6 VIN L2 Q1 3nH Q4 R3 140 RF1 140 RE1 12 RE2 12 Q2
Q5
RF2 200
SR00231
Figure 17. Schematic Diagram
1992 Feb 24
7
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
POWER DISSIPATION CONSIDERATIONS
When using the part at elevated temperature, the engineer should consider the power dissipation capabilities of each package. At the nominal supply voltage of 6V, the typical supply current is 25mA (32mA Max). For operation at supply voltages other than 6V, see Figure 3 for ICC versus VCC curves. The supply current is inversely proportional to temperature and varies no more than 1mA between 25C and either temperature extreme. The change is 0.1% per over the range. The recommended operating temperature ranges are air-mount specifications. Better heat sinking benefits can be realized by mounting the D package body against the PC board plane.
output pins of the device. This circuit is shown in Figure 18. Follow these recommendations to get the best frequency response and noise immunity. The board design is as important as the integrated circuit design itself.
SCATTERING PARAMETERS
The primary specifications for the NE/SA/SE5205A are listed as S-parameters. S-parameters are measurements of incident and reflected currents and voltages between the source, amplifier and load as well as transmission losses. The parameters for a two-port network are defined in Figure 19. Actual S-parameter measurements using an HP network analyzer (model 8505A) and an HP S-parameter tester (models 8503A/B) are shown in Figure 20. Values for the figures below are measured and specified in the data sheet to ease adaptation and comparison of the NE/SA/SE5205A to other high-frequency amplifiers.
VCC
PC BOARD MOUNTING
In order to realize satisfactory mounting of the NE5205A to a PC board, certain techniques need to be utilized. The board must be double-sided with copper and all pins must be soldered to their respective areas (i.e., all GND and VCC pins on the SO package). The power supply should be decoupled with a capacitor as close to the VCC pins as possible and an RF choke should be inserted between the supply and the device. Caution should be exercised in the connection of input and output pins. Standard microstrip should be observed wherever possible. There should be no solder bumps or burrs or any obstructions in the signal path to cause launching problems. The path should be as straight as possible and lead lengths as short as possible from the part to the cable connection. Another important consideration is that the input and output should be AC coupled. This is because at VCC=6V, the input is approximately at 1V while the output is at 3.1V. The output must be decoupled into a low impedance system or the DC bias on the output of the amplifier will be loaded down causing loss of output power. The easiest way to decouple the entire amplifier is by soldering a high frequency chip capacitor directly to the input and
RF CHOKE DECOUPLING CAPACITOR VIN AC COUPLING CAPACITOR NE5205A AC COUPLING CAPACITOR VOUT
SR00232
Figure 18. Circuit Schematic for Coupling and Power Supply Decoupling
POWER REFLECTED FROM INPUT PORT S11 -- INPUT RETURN LOSS S21 S11 = POWER AVAILABLE FROM GENERATOR AT INPUT PORT
S12 -- REVERSE TRANSMISSION LOSS OSOLATION S11 S22 S21 -- FORWARD TRANSMISSION LOSS OR INSERTION GAIN
S12 =
REVERSE TRANSDUCER POWER GAIN
S21 =
TRANSDUCER POWER GAIN
S12 S22 -- OUTPUT RETURN LOSS
S22 =
POWER REFLECTED FROM OUTPUT PORT POWER AVAILABLE FROM GENERATOR AT OUTPUT PORT
a. Two-Port Network Defined Figure 19.
b.
SR00233
1992 Feb 24
8
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
50 System
25 vcc = 8v INSERTION GAIN--dB vcc = 7v 20 ISOLATION GAIN--dB 20 25
75 System
vcc = 8v vcc = 7v
vcc = 6v 15 ZO = 50 TA = 25oC 10 101 vcc = 5v
vcc = 6v 15 ZO = 75 TA = 25oC vcc = 5v
2
4
6
8 102
2
4
6
8 103
10 101
2
4
6
8 102
2
4
6
8 103
FREQUENCY--MHz
FREQUENCY--MHz
a. Insertion Gain vs Frequency (S21)
10 10
b. Insertion Gain vs Frequency (S21)
ISOLATION--dB
-20
VCC = 6V ZO = 50 TA = 25oC
ISOLATION--dB
-15
-15
ZO = 75 TA = 25oC VCC = 6V
-20
-25 -25 -30 -30 101
2
4
6 8 102
2
4
6
8 103
101
2
4
6 8 102
2
4
6 8 103
FREQUENCY--MHz
FREQUENCY--MHz
c. Isolation vs Frequency (S12)
40 INPUT RETURN LOSS--dB OUTPUT RETURN LOSS--dB INPUT RETURN LOSS--dB OUTPUT RETURN LOSS--dB 35 30 OUTPUT 25 20 VCC = 6V ZO = 50 TA = 25oC 40 35 30 25 20
d. S12 Isolation vs Frequency
OUTPUT
INPUT
INPUT 15 10
15 10
VCC = 6V ZO = 75 TA = 25oC
101
2
4
6
8 102
2
4
6 8 103
101
2
4
6
8 102
2
4
6 8 103
FREQUENCY--MHz
FREQUENCY--MHz
e. Input (S11) and Output (S22) Return Loss vs Frequency Figure 20.
f. Input (S11) and Output (S22) Return Loss vs Frequency
SR00234
1992 Feb 24
9
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
The most important parameter is S21. It is defined as the square root of the power gain, and, in decibels, is equal to voltage gain as shown below: ZD=ZIN=ZOUT for the NE/SA/SE5205A P IN ) V IN ZD
2
1dB from its low power value. The decrease is due to nonlinearities in the amplifier, an indication of the point of transition between small-signal operation and the large signal mode. The saturated output power is a measure of the amplifier's ability to deliver power into an external load. It is the value of the amplifier's output power when the input is heavily overdriven. This includes the sum of the power in all harmonics.
NE/SA/ SE5205A ZD V OUT ZD V IN ZD
2 2
P OUT )
V OUT ZD
2
N
P OUT P IN
+
+
V OUT V IN
2
2
+ PI
INTERMODULATION INTERCEPT TESTS
The intermodulation intercept is an expression of the low level linearity of the amplifier. The intermodulation ratio is the difference in dB between the fundamental output signal level and the generated distortion product level. The relationship between intercept and intermodulation ratio is illustrated in Figure 22, which shows product output levels plotted versus the level of the fundamental output for two equal strength output signals at different frequencies. The upper line shows the fundamental output plotted against itself with a 1dB to 1dB slope. The second and third order products lie below the fundamentals and exhibit a 2:1 and 3:1 slope, respectively. The intercept point for either product is the intersection of the extensions of the product curve with the fundamental output. The intercept point is determined by measuring the intermodulation ratio at a single output level and projecting along the appropriate product slope to the point of intersection with the fundamental. When the intercept point is known, the intermodulation ratio can be determined by the reverse process. The second order IMR is equal to the difference between the second order intercept and the fundamental output level. The third order IMR is equal to twice the difference between the third order intercept and the fundamental output level. These are expressed as: IP2=POUT+IMR2 IP3=POUT+IMR3/2 where POUT is the power level in dBm of each of a pair of equal level fundamental output signals, IP2 and IP3 are the second and third order output intercepts in dBm, and IMR2 and IMR3 are the second and third order intermodulation ratios in dB. The intermodulation intercept is an indicator of intermodulation performance only in the small signal operating range of the amplifier. Above some output level which is below the 1dB compression point, the active device moves into large-signal operation. At this point the intermodulation products no longer follow the straight line output slopes, and the intercept description is no longer valid. It is therefore important to measure IP2 and IP3 at output levels well below 1dB compression. One must be careful, however, not to select too low levels because the test equipment may not be able to recover the signal from the noise. For the NE/SA/SE5205A we have chosen an output level of -10.5dBm with fundamental frequencies of 100.000 and 100.01MHz, respectively.
PI=VI 2 PI=Insertion Power Gain VI=Insertion Voltage Gain Measured value for the NE/SA/SE5205A = |S21 | 2 = 100 + | S 21 | 2 + 100 P IN V OUT + P I + S 21 + 10 and V I + V IN In decibels: PI(dB) =10 Log | S21 | 2 = 20dB VI(dB) = 20 Log S21 = 20dB PI(dB) = VI(dB) = S21(dB) = 20dB Also measured on the same system are the respective voltage standing wave ratios. These are shown in Figure 21. The VSWR can be seen to be below 1.5 across the entire operational frequency range. Relationships exist between the input and output return losses and the voltage standing wave ratios. These relationships are as follows: INPUT RETURN LOSS=S11dB S11dB=20 Log | S11 | OUTPUT RETURN LOSS=S22dB S22dB=20 Log | S22 | INPUT VSWR=1.5 OUTPUT VSWR=1.5 NP I + P OUT
1dB GAIN COMPRESSION AND SATURATED OUTPUT POWER
The 1dB gain compression is a measurement of the output power level where the small-signal insertion gain magnitude decreases
1992 Feb 24
10
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
2.0 1.9 1.8 1.7 INPUT VSWR 1.6 1.5 1.4 1.3 1.2 1.1 1.0 101 ZO = 50 ZO = 75 TA = 25oC VCC = 6V
2.0 1.9 1.8 . OUTPUT VSWR 1.7 1.6 1.5 1.4 1.3 1.2 1.1 ZO = 50 ZO = 75 Tamb = 25oC VCC = 6V
2
4
6 8 102 2 FREQUENCY--MHz
4
6 8 103
1.0 101
2
4
6 8 102 2 FREQUENCY--MHz
4
6 8 103
a. Input VSWR vs Frequency
b. Output VSWR vs Frequency
SR00235
Figure 21. Input/Output VSWR vs Frequency
ADDITIONAL READING ON SCATTERING PARAMETERS
For more information regarding S-parameters, please refer to High-Frequency Amplifiers by Ralph S. Carson of the University of Missouri, Rolla, Copyright 1985; published by John Wiley & Sons, Inc.
+30 THIRD ORDER INTERCEPT POINT 1dB COMPRESSION POINT
"S-Parameter Techniques for Faster, More Accurate Network Design", HP App Note 95-1, Richard W. Anderson, 1967, HP Journal. "S-Parameter Design", HP App Note 154, 1972.
+20
2ND ORDER INTERCEPT POINT
+10 OUTPUT LEVEL dBm
0
FUNDAMENTAL RESPONSE
-10 2ND ORDER RESPONSE 3RD ORDER RESPONSE
-20
-30
-40 -60 -50 -40 -30 -20 -10 0 +10 +20 +30 +40 INPUT LEVEL dBm
SR00236
Figure 22.
1992 Feb 24
11
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
SO8: plastic small outline package; 8 leads; body width 3.9mm
SOT96-1
1992 Feb 24
12
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
DIP8: plastic dual in-line package; 8 leads (300 mil)
SOT97-1
1992 Feb 24
13
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative or in Design
Definition
This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. (c) Copyright Philips Electronics North America Corporation 1993 All rights reserved. Printed in U.S.A.
1992 Feb 24
14

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